| T RoHm seMI(oNnucroR Super Fast Recovery Diode RFUS20NS6S Data Sheet Oseries Onimensions Unit: mm oLand size fi - ure Unit: mm) Ultra Fast Recovery oApplications General rectification Grin oFeatures ostructur ;Storage temperature -55 to +150 1)U|tra low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDSJEIT :T0263S :6: oconstruction Silicon epitaxial planer atES:u1 11 5:03 oAbsolute maximum ratings(Tc=25°C) Parameter Conditions Repetitive peak reverse voltage Reverse voltage Direct voltage Average rectified fom/ard current BOHZ half sin wave resistive load ,60Hz half sin wave, Non-repetitive 1/2 lo per diode Forward current surge peak _ one cycle peak value, TJ=25°C Junction temperature oElectricaI characteristics(Tj=25°C) ParameterConditions Forward voltage Reverse current Reverse recovery time VR=600Vn |F=0.5A,|R=1A,lrr=0.25X|R Imn—-—Thermal resistance www.r0hm.C0m ? 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A |